De acum să ne aşteptăm să plouă cu DDR3… Cel puţin pe platformele Intel că AMD nu are încă prea multe şanse.
The new DDR3 Synchronous DRAM (Dynamic Random Access Memory) standard is expected to be broadly adopted in the industry, providing dramatic improvements in performance at reduced power – as compared to prior generation technologies (SDR, DDR1, DDR2). Key technology and functional improvements include a 1.5V power supply, increased operating temperature range, memory device reset, burst chop, dynamic on-die termination, output driver calibration, write leveling and other innovative features to enable high speed operation and broad applicability in loose device and module applications.
JEDEC JC-42.3 chairman Joe Macri (AMD) said that “the DDR3 standard represents the culmination of countless hours of collaboration between memory device, system, component and module producers. This standard will permit emerging systems to achieve greater performance, storage and functionality, consistent with the needs of an increasingly information-intensive world community.”
Intel Director of Platform Memory Operations and JEDEC Board member Paul Fahey stated that “the DDR3 standard will serve as the lynchpin for developing a new generation of memory solutions that address demands for both lower power and high performance. DDR3 will be an essential ingredient in future mobility platforms and those applications requiring the highest performance, such as video-on-demand, encoding and decoding, gaming and 3D visualization.”
In addition to the introduction of the DDR3 Device Specification, JEDEC is completing publication and release of a wide range of DDR3-based memory modules, including Registered DIMMs, Unbuffered DIMMs, SO (Small Outline) DIMMs and other module types and configurations intended for use in desktop, mobile and server computer systems, telecommunications, point of sale and a wide range of other electronic products. Support devices have also been developed and include registers, PLL’s (phase locked loops) and other interface devices optimized for use with the new technology.
The DDR3 standard is intended to operate over a performance range from 800 to 1600 MT/s (million transfers per second) and device densities from 512 Mb to 8 Gb in monolithic and stacked packages.
In conjunction with and to facilitate comprehension and adoption of the new memory standard, JEDEC is also announcing a DDR3 Technical Workshop, to be held in San Jose California on October 3-4, 2007. This workshop will include technical presentations by major DRAM and chipset producers, and is intended to provide adopters with a detailed understanding of the DDR3 specification, operational characteristics, changes from prior generation devices, application guidelines, an overview of JEDEC memory modules and other critical information related to this key memory technology. Presenters will have detailed technical knowledge of the device and the JEDEC specification, and will be available to answer questions